%0 Conference Proceedings
%T Exploiting Cross-Layer Hotness Identification to Improve Flash Memory System Performance
%+ Xi'an Jiaotong University (Xjtu)
%+ Shenzhen Institute of Information Technology
%A Cui, Jinhua
%A Wu, Weiguo
%A Nie, Shiqiang
%A Huang, Jianhang
%A Hu, Zhuang
%A Zou, Nianjun
%A Wang, Yinfeng
%Z Part 1: Memory: Non-Volatile, Solid State Drives, Hybrid Systems
%< avec comité de lecture
%( Lecture Notes in Computer Science
%B 13th IFIP International Conference on Network and Parallel Computing (NPC)
%C Xi'an, China
%Y Guang R. Gao
%Y Depei Qian
%Y Xinbo Gao
%Y Barbara Chapman
%Y Wenguang Chen
%I Springer International Publishing
%3 Network and Parallel Computing
%V LNCS-9966
%P 17-28
%8 2016-10-28
%D 2016
%R 10.1007/978-3-319-47099-3_2
%K NAND flash memory
%K Endurance
%K Raw bit error rate
%K Threshold voltage
%K Cross-layer
%Z Computer Science [cs]Conference papers
%X Flash memory has been widely deployed in modern storage systems. However, the density improvement and technology scaling would decrease its endurance and I/O performance, which motivates the search to improve flash performance and reduce cell wearing. Wearing reduction can be achieved by lowering the threshold voltages, but at the cost of slower reads. In this paper, the access hotness characteristics are exploited for read performance and endurance improvement. First, with the understanding of the reliability characteristics of flash memory, the relationship among flash cell wearing, read latency and bit error rate is introduced. Then, based on the hotness information provided by buffer management, the threshold voltages of a cell for write-hot data are decreased for wearing reduction, while these for read-hot data are increased for read latency reduction. We demonstrate analytically through simulation that the proposed technique achieves significant endurance and read performance improvements without sacrificing the write throughput performance.
%G English
%Z TC 10
%Z WG 10.3
%2 https://inria.hal.science/hal-01647990/document
%2 https://inria.hal.science/hal-01647990/file/432484_1_En_2_Chapter.pdf
%L hal-01647990
%U https://inria.hal.science/hal-01647990
%~ IFIP-LNCS
%~ IFIP
%~ IFIP-TC
%~ IFIP-TC10
%~ IFIP-NPC
%~ IFIP-WG10-3
%~ IFIP-LNCS-9966