%0 Conference Proceedings
%T Electroforming Process in Metal-Oxide-Polymer Resistive Switching Memories
%+ Center of Electronics Optoelectronics and Telecommunications [Faro] (CEOT)
%+ Philips Research Laboratories [Eindhoven]
%+ Eindhoven University of Technology [Eindhoven] (TU/e)
%A Chen, Qian
%A Gomes, Henrique, L.
%A Kiazadeh, Asal
%A Rocha, Paulo, F.
%A Leeuw, Dago, De
%A Meskers, Stefan, J.
%Z Part 18: Electronic Materials
%< avec comité de lecture
%( IFIP Advances in Information and Communication Technology
%B 3rd Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS)
%C Costa de Caparica, Portugal
%Y Luis M. Camarinha-Matos
%Y Ehsan Shahamatnia
%Y Gonçalo Nunes
%I Springer
%3 Technological Innovation for Value Creation
%V AICT-372
%P 527-534
%8 2012-02-27
%D 2012
%R 10.1007/978-3-642-28255-3_58
%K Resistive Random Access Memory (RRAM)
%K electroforming softbreakdown
%K non-volatile memory
%Z Computer Science [cs]Conference papers
%X Electroforming of an Al/Al2O3/polymer/Al resistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current–voltage characteristics and non–volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse bias and for thicker oxides layers. Thermally detrapping experiments give a trap depth of 0.65 eV and a density of 5x1017 /cm2. It is proposed that the trapped electrons induce a dipole layer across the oxide. The associated electric field triggers breakdown and ultimately dictate the overall memory characteristics.
%G English
%Z TC 5
%Z WG 5.5
%2 https://inria.hal.science/hal-01365772/document
%2 https://inria.hal.science/hal-01365772/file/978-3-642-28255-3_58_Chapter.pdf
%L hal-01365772
%U https://inria.hal.science/hal-01365772
%~ IFIP
%~ IFIP-AICT
%~ IFIP-TC
%~ IFIP-TC5
%~ IFIP-WG
%~ IFIP-WG5-5
%~ IFIP-DOCEIS
%~ IFIP-AICT-372