@inproceedings{chen:hal-01365772,
  TITLE = {{Electroforming Process in Metal-Oxide-Polymer Resistive Switching Memories}},
  AUTHOR = {Chen, Qian and Gomes, Henrique L. and Kiazadeh, Asal and Rocha, Paulo F. and Leeuw, Dago De and Meskers, Stefan J.},
  URL = {https://inria.hal.science/hal-01365772},
  NOTE = {Part 18: Electronic Materials},
  BOOKTITLE = {{3rd Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS)}},
  ADDRESS = {Costa de Caparica, Portugal},
  EDITOR = {Luis M. Camarinha-Matos and Ehsan Shahamatnia and Gon{\c c}alo Nunes},
  PUBLISHER = {{Springer}},
  SERIES = {Technological Innovation for Value Creation},
  VOLUME = {AICT-372},
  PAGES = {527-534},
  YEAR = {2012},
  MONTH = Feb,
  DOI = {10.1007/978-3-642-28255-3\_58},
  KEYWORDS = {Resistive Random Access Memory (RRAM) ; electroforming softbreakdown ; non-volatile memory},
  PDF = {https://inria.hal.science/hal-01365772/file/978-3-642-28255-3_58_Chapter.pdf},
  HAL_ID = {hal-01365772},
  HAL_VERSION = {v1},
}